Researchers at The University of Osaka, in collaboration with Ritsumeikan University, have demonstrated that growing europium-doped gallium nitride (Eu-doped GaN) on a semipolar crystal plane dramatically improves red light emission. The team found that this approach selectively promotes the formation of highly efficient Eu luminescent centers, resulting in red emission intensity more than 3.6 times higher than that of conventionally grown polar-plane material.
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